PART |
Description |
Maker |
2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
BAW79B BAW78A-BAW79D BAW79D BAW79C BAW79A Q62702-A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) From old datasheet system
|
SIEMENS A G Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
2SC2790 |
SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION
|
Toshiba Semiconductor
|
HSU226 |
Diodes>Switching Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器,高速开 Silicon Schottky Barrier Diode for Various Detector High Speed Switching Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
H5N2801P |
Silicon N Channel MOS FET High Speed Power Switching Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
Q62702-A693 BAV74 |
From old datasheet system Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
H7N1004FM |
Silicon N-Channel MOS FET HigH-Speed Power Switching Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
H5N2515P-E H5N2515P |
Transistors>Switching/MOSFETs Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|